Impact of the dislocation density on the transient photoluminescence intensity in GaN semiconductor
K. K. Sabelfeld; A. E. Kireeva
- Published
- Publisher
- Sobolev Institute of Mathematics
- Journal / collection
- Sibirskie Elektronnye Matematicheskie Izvestiya
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.33048/semi.2024.21.040
The original publisher provides the full text and its access options.
Cite this source
K. K. Sabelfeld; A. E. Kireeva. Impact of the dislocation density on the transient photoluminescence intensity in GaN semiconductor. Sibirskie Elektronnye Matematicheskie Izvestiya. 2024-12-31. https://doi.org/10.33048/semi.2024.21.040