Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface
Keisuke Utsumi; Hajime Tanaka; Nobuya Mori
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad189c
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Cite this source
Keisuke Utsumi; Hajime Tanaka; Nobuya Mori. Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface. Japanese Journal of Applied Physics. 2024-01-30. https://doi.org/10.35848/1347-4065/ad189c