Atomistic observation of defect evolution during solidification in semiconductor InAs
Changxin Han; Bohua Zhang; He Zheng; Scott X. Mao
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- Nanoscale
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d5nr02745d
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Cite this source
Changxin Han; Bohua Zhang; He Zheng; Scott X. Mao. Atomistic observation of defect evolution during solidification in semiconductor InAs. Nanoscale. 2025. https://doi.org/10.1039/d5nr02745d