Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission
A. N. Yablonskiy; V. B. Shmagin; V. E. Zakharov; D. V. Yurasov; M. V. Shaleev; E. V. Demidov; A. N. Mikhaylov; D. I. Tetelbaum; E. E. Rodyakina; E. E. Morozova; D. V. Shengurov; S. A. Kraev; A. V. Novikov
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0239609
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Cite this source
A. N. Yablonskiy; V. B. Shmagin; V. E. Zakharov; D. V. Yurasov; M. V. Shaleev; E. V. Demidov; A. N. Mikhaylov; D. I. Tetelbaum; E. E. Rodyakina; E. E. Morozova; D. V. Shengurov; S. A. Kraev; A. V. Novikov. Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission. Applied Physics Letters. 2024-12-02. https://doi.org/10.1063/5.0239609