AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge
Yuchen Deng; Jieensi Gelan; Kazuya Uryu; Toshi-kazu Suzuki
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0186457
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Cite this source
Yuchen Deng; Jieensi Gelan; Kazuya Uryu; Toshi-kazu Suzuki. AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge. Journal of Applied Physics. 2024-02-28. https://doi.org/10.1063/5.0186457