Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor
Le Su; Cai-Lin Wang; Zai-Chao Tan; Yin Luo; Wu-Hua Yang; Chao Zhang; Department of Electronic and Engineering, Xi’an University of Technology, Xi’an 710048, China; Suzhou Convert Semiconductor Co., Zhangjiagang 215600, China
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.73.20240144
The original publisher provides the full text and its access options.
Cite this source
Le Su; Cai-Lin Wang; Zai-Chao Tan; Yin Luo; Wu-Hua Yang; Chao Zhang; Department of Electronic and Engineering, Xi’an University of Technology, Xi’an 710048, China; Suzhou Convert Semiconductor Co., Zhangjiagang 215600, China. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica. 2024. https://doi.org/10.7498/aps.73.20240144