Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In 0.1 Al 0.5 Ga 0.4 N Barrier
Ang Li; Chong Wang; Yunlong He; Wentao Zhang; Xuefeng Zheng; Xiaohua Ma; Kai Liu; Yue Hao
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400239
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Cite this source
Ang Li; Chong Wang; Yunlong He; Wentao Zhang; Xuefeng Zheng; Xiaohua Ma; Kai Liu; Yue Hao. Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In 0.1 Al 0.5 Ga 0.4 N Barrier. physica status solidi (a). 2024-05-28. https://doi.org/10.1002/pssa.202400239