(Invited) Amorphous Indium-Gallium-Tin Oxide Thin-Film Transistor with High Mobility of 40 cm 2 V −1 s −1 and Excellent Stability
Taebin Lim; Jiwon Sun; Solbee Lee; Jin Jang
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Meeting Abstracts
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/ma2024-02342385mtgabs
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Cite this source
Taebin Lim; Jiwon Sun; Solbee Lee; Jin Jang. (Invited) Amorphous Indium-Gallium-Tin Oxide Thin-Film Transistor with High Mobility of 40 cm 2 V −1 s −1 and Excellent Stability. ECS Meeting Abstracts. 2024-11-22. https://doi.org/10.1149/ma2024-02342385mtgabs