Comparative Study Of GAA-JL Transistor With And Without FE Material For Hydrogen Gas Sensing
Ashish Verma; Preeti Verma; Dhandapani Vaithiyanathan
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 28th International Symposium on VLSI Design and Test (VDAT)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/vdat63601.2024.10705719
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Cite this source
Ashish Verma; Preeti Verma; Dhandapani Vaithiyanathan. Comparative Study Of GAA-JL Transistor With And Without FE Material For Hydrogen Gas Sensing. 2024 28th International Symposium on VLSI Design and Test (VDAT). 2024-09-01. https://doi.org/10.1109/vdat63601.2024.10705719