Improved transistor stability against hydrogen by fluorine doping in indium-gallium-zinc-oxide front and back channels
Changjun No; Chang-Yun Na; Sung Min Cho
- Published
- Publisher
- Elsevier BV
- Research area
- Semiconductors
- Source type
- Preprint / posted paper
- DOI
- 10.2139/ssrn.5409167
This is a preprint or other posted paper. Check the original source for its review and publication status.
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Cite this source
Changjun No; Chang-Yun Na; Sung Min Cho. Improved transistor stability against hydrogen by fluorine doping in indium-gallium-zinc-oxide front and back channels. Elsevier BV. 2025. https://doi.org/10.2139/ssrn.5409167