Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

SRAM With Oxide Semiconductor Pull-Down Transistors on the Backside Enabling Full-Node PPA Improvement

Tao Chou; Tzu-Yun Liu; Li-Kai Wang; Tsai-Yu Chung; Ching-Wang Yao; Hsin-Cheng Lin; C. W. Liu

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Electron Device Letters
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/led.2024.3498840

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Tao Chou; Tzu-Yun Liu; Li-Kai Wang; Tsai-Yu Chung; Ching-Wang Yao; Hsin-Cheng Lin; C. W. Liu. SRAM With Oxide Semiconductor Pull-Down Transistors on the Backside Enabling Full-Node PPA Improvement. IEEE Electron Device Letters. 2025-01. https://doi.org/10.1109/led.2024.3498840

Download RIS