Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs
Wei-Min Wu; Shih-Hung Chen; Dongyang Yan; Bertrand Parvais; Nadine Collaert
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 46th Annual EOS/ESD Symposium (EOS/ESD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/eos/esd61719.2024.10702150
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Cite this source
Wei-Min Wu; Shih-Hung Chen; Dongyang Yan; Bertrand Parvais; Nadine Collaert. Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs. 2024 46th Annual EOS/ESD Symposium (EOS/ESD). 2024-09-16. https://doi.org/10.23919/eos/esd61719.2024.10702150