Design and Analysis of Symmetrical Dual Gate Tunnel Field Effect Transistor with Gate Dielectric Materials in 10nm Technology
S. Buttol; B. Balaji; K. Srinivasa Rao
- Published
- Publisher
- International Digital Organization for Scientific Information (IDOSI)
- Journal / collection
- International Journal of Engineering
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.5829/ije.2024.37.04a.02
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Cite this source
S. Buttol; B. Balaji; K. Srinivasa Rao. Design and Analysis of Symmetrical Dual Gate Tunnel Field Effect Transistor with Gate Dielectric Materials in 10nm Technology. International Journal of Engineering. 2024. https://doi.org/10.5829/ije.2024.37.04a.02