One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time
Po-Yi Kuo
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2024.3387438
The original publisher provides the full text and its access options.
Cite this source
Po-Yi Kuo. One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time. IEEE Electron Device Letters. 2024-06. https://doi.org/10.1109/led.2024.3387438