Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Epitaxially Stacked 12‐Layer Perovskite Oxide Heterostructure as a Double‐Level Double‐Gate Field‐Effect Transistor

Juhan Kim; Jihoon Seo; Hahoon Lee; Celesta S. Chang; Kookrin Char

Published
Publisher
Wiley
Journal / collection
Advanced Functional Materials
Research area
Semiconductors
Source type
Journal article
DOI
10.1002/adfm.202402059

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Juhan Kim; Jihoon Seo; Hahoon Lee; Celesta S. Chang; Kookrin Char. Epitaxially Stacked 12‐Layer Perovskite Oxide Heterostructure as a Double‐Level Double‐Gate Field‐Effect Transistor. Advanced Functional Materials. 2024-03-22. https://doi.org/10.1002/adfm.202402059

Download RIS