Realization of Steep-Slope Transistor Using 1-D Gate-All-Around Carbon Nanotubes With Broken-Gap Source Structure
Lijun Xu; Kun Luo; Guohui Zhan; Xiaoyue Feng; Hong Yang; Yan Liu; Jiangtao Liu; Qinzhi Xu; Huaxiang Yin; Zhenhua Wu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3433314
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Cite this source
Lijun Xu; Kun Luo; Guohui Zhan; Xiaoyue Feng; Hong Yang; Yan Liu; Jiangtao Liu; Qinzhi Xu; Huaxiang Yin; Zhenhua Wu. Realization of Steep-Slope Transistor Using 1-D Gate-All-Around Carbon Nanotubes With Broken-Gap Source Structure. IEEE Transactions on Electron Devices. 2024-11. https://doi.org/10.1109/ted.2024.3433314