High Operation Speed(10ns/100ns) and Low Read Current (sub-1μA) 2D Floating Gate Transistor
Jun Yu; Jiawei Fu; Candong Zhao; Fuwei Zhuge; Qi Chen; Yuhui He; Xiang-Shui Miao
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Memory Workshop (IMW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/imw59701.2024.10536953
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Cite this source
Jun Yu; Jiawei Fu; Candong Zhao; Fuwei Zhuge; Qi Chen; Yuhui He; Xiang-Shui Miao. High Operation Speed(10ns/100ns) and Low Read Current (sub-1μA) 2D Floating Gate Transistor. 2024 IEEE International Memory Workshop (IMW). 2024-05-12. https://doi.org/10.1109/imw59701.2024.10536953