Evaluation of the power loss in IGBT single transistor device under the condition of pulse duration of 100 ns
Zenghui Yang; Taizhuang Hu; Diangeng Li; Huibo Zhang; Zicheng Zhang
- Published
- Publisher
- AIP Publishing
- Journal / collection
- AIP Advances
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0229879
The original publisher provides the full text and its access options.
Cite this source
Zenghui Yang; Taizhuang Hu; Diangeng Li; Huibo Zhang; Zicheng Zhang. Evaluation of the power loss in IGBT single transistor device under the condition of pulse duration of 100 ns. AIP Advances. 2024-09-01. https://doi.org/10.1063/5.0229879