The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time
Jesse T. Kemmerling; Yuxin Du; Rongming Chu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3514572
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Cite this source
Jesse T. Kemmerling; Yuxin Du; Rongming Chu. The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time. IEEE Transactions on Electron Devices. 2025-02. https://doi.org/10.1109/ted.2024.3514572