High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor
Sahngik A. Mun; Yoon Ho Jang; Janguk Han; Sung Keun Shim; Sukin Kang; Yonghee Lee; Jinheon Choi; Sunwoo Cheong; Soo Hyung Lee; Seung Kyu Ryoo; Joon-Kyu Han; Cheol Seong Hwang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.4c07747
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Cite this source
Sahngik A. Mun; Yoon Ho Jang; Janguk Han; Sung Keun Shim; Sukin Kang; Yonghee Lee; Jinheon Choi; Sunwoo Cheong; Soo Hyung Lee; Seung Kyu Ryoo; Joon-Kyu Han; Cheol Seong Hwang. High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor. ACS Applied Materials & Interfaces. 2024-08-01. https://doi.org/10.1021/acsami.4c07747