Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors
Yun-Pin Chiu; Hsin-Wen Huang; Yuh-Renn Wu
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review Applied
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/physrevapplied.21.044046
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Cite this source
Yun-Pin Chiu; Hsin-Wen Huang; Yuh-Renn Wu. Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors. Physical Review Applied. 2024-04-25. https://doi.org/10.1103/physrevapplied.21.044046