First demonstration of SRAM transistor based on 3-dimensional stacked FET with back side interconnection structure beyond 1nm node
Mingyu Kim; Jaehyun Park; Sungil Park; Jejune Park; Juhyun Kim; Daewon Ha; Hyungcheol Shin
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Silicon Nanoelectronics Workshop (SNW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/snw63608.2024.10639194
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Cite this source
Mingyu Kim; Jaehyun Park; Sungil Park; Jejune Park; Juhyun Kim; Daewon Ha; Hyungcheol Shin. First demonstration of SRAM transistor based on 3-dimensional stacked FET with back side interconnection structure beyond 1nm node. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024-06-15. https://doi.org/10.1109/snw63608.2024.10639194