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Research literature / Conference paper

Comparative Analysis of 12-nm Gate-all-Around Vertically Stacked Nanosheet Field Effect Transistor for High-k Gate-oxide Dielectrics

Kanchan Saini; Vinod Kumar

Published
Publisher
IEEE
Journal / collection
2024 First International Conference on Electronics, Communication and Signal Processing (ICECSP)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/icecsp61809.2024.10698595

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Kanchan Saini; Vinod Kumar. Comparative Analysis of 12-nm Gate-all-Around Vertically Stacked Nanosheet Field Effect Transistor for High-k Gate-oxide Dielectrics. 2024 First International Conference on Electronics, Communication and Signal Processing (ICECSP). 2024-08-08. https://doi.org/10.1109/icecsp61809.2024.10698595

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