A Comparative Study between Thermal Tantalum Oxide and ALD-deposited Aluminum Oxide Gate Insulators in a-IGZO Thin-film Transistor
Eun-Seong Yu; Sang-Ho Hwang; Ah-Hyun Jeong; Seung-Jae Moon; Byung-Seong Bae
- Published
- Publisher
- The Institute of Electronics Engineers of Korea
- Journal / collection
- Journal of the Institute of Electronics and Information Engineers
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.5573/ieie.2025.62.1.36
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Cite this source
Eun-Seong Yu; Sang-Ho Hwang; Ah-Hyun Jeong; Seung-Jae Moon; Byung-Seong Bae. A Comparative Study between Thermal Tantalum Oxide and ALD-deposited Aluminum Oxide Gate Insulators in a-IGZO Thin-film Transistor. Journal of the Institute of Electronics and Information Engineers. 2025-01-31. https://doi.org/10.5573/ieie.2025.62.1.36