Field Effect Transistor Incorporating Negative Capacitance and Nanowire Structures for the Attenuation of Gate Leakage Phenomena
Aapurva Kaul; Sonam Rewari; Deva Nand
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edkcon62339.2024.10870658
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Cite this source
Aapurva Kaul; Sonam Rewari; Deva Nand. Field Effect Transistor Incorporating Negative Capacitance and Nanowire Structures for the Attenuation of Gate Leakage Phenomena. 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). 2024-11-30. https://doi.org/10.1109/edkcon62339.2024.10870658