A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications
Weijie Wei; Weifeng Lü; Ying Han; Caiyun Zhang; Dengke Chen
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronics Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mejo.2024.106126
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Cite this source
Weijie Wei; Weifeng Lü; Ying Han; Caiyun Zhang; Dengke Chen. A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications. Microelectronics Journal. 2024-03. https://doi.org/10.1016/j.mejo.2024.106126