Analysis of etched drain based Cylindrical agate‐all‐around tunnel field effect transistor based static random access memory cell design
Ankur Beohar; Ribu Mathew; Darshan Sarode; Abhishek Kumar Upadhyay; Kavita Khare
- Published
- Publisher
- Wiley
- Journal / collection
- International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/jnm.3296
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Cite this source
Ankur Beohar; Ribu Mathew; Darshan Sarode; Abhishek Kumar Upadhyay; Kavita Khare. Analysis of etched drain based Cylindrical agate‐all‐around tunnel field effect transistor based static random access memory cell design. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 2024-10-22. https://doi.org/10.1002/jnm.3296