Subthreshold Drain Current Model of Cylindrical Gate All‐Around Junctionless Transistor With Three Different Gate Materials
S. Manikandan; P. Suveetha Dhanaselvam; M. Karthigai Pandian
- Published
- Publisher
- Wiley
- Journal / collection
- International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/jnm.3312
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Cite this source
S. Manikandan; P. Suveetha Dhanaselvam; M. Karthigai Pandian. Subthreshold Drain Current Model of Cylindrical Gate All‐Around Junctionless Transistor With Three Different Gate Materials. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 2024-10-27. https://doi.org/10.1002/jnm.3312