Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
Hyojun Choi; Giuk Kim; Sangho Lee; Hunbeom Shin; Youngjin Lim; Kang Kim; Do-Hyung Kim; Il-Kwon Oh; Sang-Hee Ko Park; Jinho Ahn; Sanghun Jeon
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2024.3466211
The original publisher provides the full text and its access options.
Cite this source
Hyojun Choi; Giuk Kim; Sangho Lee; Hunbeom Shin; Youngjin Lim; Kang Kim; Do-Hyung Kim; Il-Kwon Oh; Sang-Hee Ko Park; Jinho Ahn; Sanghun Jeon. Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor. IEEE Electron Device Letters. 2024-12. https://doi.org/10.1109/led.2024.3466211