Write Bias Scheme Optimization of Ferroelectric Field-Effect-Transistor (FeFET) Synapse for Accurate On-chip Training
Seungmin Kang; Sangwan Kim; Sihyun Kim
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 21st International SoC Design Conference (ISOCC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/isocc62682.2024.10762218
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Cite this source
Seungmin Kang; Sangwan Kim; Sihyun Kim. Write Bias Scheme Optimization of Ferroelectric Field-Effect-Transistor (FeFET) Synapse for Accurate On-chip Training. 2024 21st International SoC Design Conference (ISOCC). 2024-08-19. https://doi.org/10.1109/isocc62682.2024.10762218