Steep Slope Device “N-type Gate-Controlled Carrier-Injection SOI-Transistor”: Suppression of Hysteresis by Ar-ion Implantation and Possibility of CMOS
Haruki Yonezaki; Takayuki Mori; Jiro Ida
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Silicon Nanoelectronics Workshop (SNW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/snw63608.2024.10639213
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Cite this source
Haruki Yonezaki; Takayuki Mori; Jiro Ida. Steep Slope Device “N-type Gate-Controlled Carrier-Injection SOI-Transistor”: Suppression of Hysteresis by Ar-ion Implantation and Possibility of CMOS. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024-06-15. https://doi.org/10.1109/snw63608.2024.10639213