Phosphorene Modified Zinc Oxide for Extended-Gate Field-Effect Transistor pH Sensors
Chih-Hsien Lai; Sheng-Xun Qiu; Jung-Chuan Chou; Po-Hui Yang; Yu-Hsun Nien; Po-Yu Kuo; Ru-Quan Chen; Kuan-Hsun Chen
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Sensors Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jsen.2025.3533888
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Cite this source
Chih-Hsien Lai; Sheng-Xun Qiu; Jung-Chuan Chou; Po-Hui Yang; Yu-Hsun Nien; Po-Yu Kuo; Ru-Quan Chen; Kuan-Hsun Chen. Phosphorene Modified Zinc Oxide for Extended-Gate Field-Effect Transistor pH Sensors. IEEE Sensors Journal. 2025-03-15. https://doi.org/10.1109/jsen.2025.3533888