Responsivity Enhancement of Wafer‐Bonded In 0.53 Ga 0.47 As Photo‐Field‐Effect Transistor on Si Substrate via Equivalent Oxide Thickness Scaling
Sung‐Han Jeon; Dae‐Hwan Ahn; Kyul Ko; Won Jun Choi; Jin‐Dong Song; Woo‐Young Choi; Jae‐Hoon Han
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202300664
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Cite this source
Sung‐Han Jeon; Dae‐Hwan Ahn; Kyul Ko; Won Jun Choi; Jin‐Dong Song; Woo‐Young Choi; Jae‐Hoon Han. Responsivity Enhancement of Wafer‐Bonded In 0.53 Ga 0.47 As Photo‐Field‐Effect Transistor on Si Substrate via Equivalent Oxide Thickness Scaling. physica status solidi (a). 2024-02-02. https://doi.org/10.1002/pssa.202300664