Non-volatile memory field effect transistor composed of ferroelectric Mn-doped InP thin films and single-layer MoS2 channel
Minsoo Kim; Jong Yeog Son
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Journal of Physics and Chemistry of Solids
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.jpcs.2024.111897
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Cite this source
Minsoo Kim; Jong Yeog Son. Non-volatile memory field effect transistor composed of ferroelectric Mn-doped InP thin films and single-layer MoS2 channel. Journal of Physics and Chemistry of Solids. 2024-05. https://doi.org/10.1016/j.jpcs.2024.111897