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Research literature / Preprint / posted paper

Comparative Performance of Mos2 Transistors: Statistical Study and One-Transistor-One-Resistive Memory Integration

Fatemeh Khorramshahi; Heorhii Bohuslavskyi; Anton Murros; Agata Piacentini; Michael Heuken; Max Lemme; Daniel Neumaier; Karl-Magnus Persson

Published
Publisher
Elsevier BV
Research area
Semiconductors
Source type
Preprint / posted paper
DOI
10.2139/ssrn.5036076

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Fatemeh Khorramshahi; Heorhii Bohuslavskyi; Anton Murros; Agata Piacentini; Michael Heuken; Max Lemme; Daniel Neumaier; Karl-Magnus Persson. Comparative Performance of Mos2 Transistors: Statistical Study and One-Transistor-One-Resistive Memory Integration. Elsevier BV. 2024. https://doi.org/10.2139/ssrn.5036076

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