Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching
Christian Miersch; Sarah Seidel; Alexander Schmid; Thomas Fuhs; Johannes Heitmann; Franziska C. Beyer
- Published
- Publisher
- American Vacuum Society
- Journal / collection
- Journal of Vacuum Science & Technology A
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1116/6.0003350
The original publisher provides the full text and its access options.
Cite this source
Christian Miersch; Sarah Seidel; Alexander Schmid; Thomas Fuhs; Johannes Heitmann; Franziska C. Beyer. Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching. Journal of Vacuum Science & Technology A. 2024-02-14. https://doi.org/10.1116/6.0003350