InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modeling up to 500 GHz
Marina Deng; Chhandak Mukherjee; Lucas Réveil; Akshay M. Arabhavi; Sara Hamzeloui; Colombo R. Bolognesi; Magali De Matos; Cristell Maneux
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3506505
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Cite this source
Marina Deng; Chhandak Mukherjee; Lucas Réveil; Akshay M. Arabhavi; Sara Hamzeloui; Colombo R. Bolognesi; Magali De Matos; Cristell Maneux. InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modeling up to 500 GHz. IEEE Transactions on Electron Devices. 2025-01. https://doi.org/10.1109/ted.2024.3506505