Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction
Bao-Xing Duan; Yu-Lin Liu; Chun-Ping Tang; Yin-Tang Yang; Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.73.20231768
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Cite this source
Bao-Xing Duan; Yu-Lin Liu; Chun-Ping Tang; Yin-Tang Yang; Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China. Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction. Acta Physica Sinica. 2024. https://doi.org/10.7498/aps.73.20231768