A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices
Jinglin Li; Aditya Shekhar; Willem D. van Driel; Guoqi Zhang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3482252
The original publisher provides the full text and its access options.
Cite this source
Jinglin Li; Aditya Shekhar; Willem D. van Driel; Guoqi Zhang. A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices. IEEE Transactions on Electron Devices. 2024-12. https://doi.org/10.1109/ted.2024.3482252