93.6 cm 2 V −1 ·s −1 Homostructure a-IGZO Thin-Film Transistor with High-k Gate Dielectric Fabricated at Room Temperature
Heng Yue Gong; Jia Cheng Li; Yang Hui Xia; Ya Dong Zhou; Hui Xia Yang; Yuan Xiao Ma; Ye Liang Wang
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edtm61175.2025.11041082
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Cite this source
Heng Yue Gong; Jia Cheng Li; Yang Hui Xia; Ya Dong Zhou; Hui Xia Yang; Yuan Xiao Ma; Ye Liang Wang. 93.6 cm 2 V −1 ·s −1 Homostructure a-IGZO Thin-Film Transistor with High-k Gate Dielectric Fabricated at Room Temperature. 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2025-03-09. https://doi.org/10.1109/edtm61175.2025.11041082