A Novel GaN Gate Driver: Transistor-Intrinsic Integration Exploiting Non-Ideal Characteristics by Device-Circuit Co-Design
Fangqing Li; Xinyu Sun; Haodong Wang; Xin Chen; Yaozong Zhong; Hongwei Gao; Haoran Qie; Yunzhe Cao; Gaofei Zhi; Xinkun Zhang; Xiaolu Guo; Yu Zhou; Qian Sun; Hui Yang
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ispsd59661.2024.10579607
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Fangqing Li; Xinyu Sun; Haodong Wang; Xin Chen; Yaozong Zhong; Hongwei Gao; Haoran Qie; Yunzhe Cao; Gaofei Zhi; Xinkun Zhang; Xiaolu Guo; Yu Zhou; Qian Sun; Hui Yang. A Novel GaN Gate Driver: Transistor-Intrinsic Integration Exploiting Non-Ideal Characteristics by Device-Circuit Co-Design. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2024-06-02. https://doi.org/10.1109/ispsd59661.2024.10579607