Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules
Philippe R. d’Egmont; Rodrigo P. M. Moreira; Christopher P. Tostado; Carolina P. Naveira-Cotta; Fernando P. Duda; Robson F. S. Dias; Kelvin Chen
- Published
- Publisher
- Old City Publishing, Inc
- Journal / collection
- High Temperatures-High Pressures
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.32908/hthp.v53.jsf07
The original publisher provides the full text and its access options.
Cite this source
Philippe R. d’Egmont; Rodrigo P. M. Moreira; Christopher P. Tostado; Carolina P. Naveira-Cotta; Fernando P. Duda; Robson F. S. Dias; Kelvin Chen. Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules. High Temperatures-High Pressures. 2024. https://doi.org/10.32908/hthp.v53.jsf07