High driving current and enhanced gate control in 1-nm gate length type-II ZnO/GaN vdWH field-effect transistor via a constituent-layer-selective doping strategy
Yi Xiang; Le-Jun Wang; Qin Xiang; Hong-Lin Ma; Chun-Ming Yang; Zhi-Qiang Fan; Lei Hu
- Published
- Publisher
- Tsinghua University Press
- Journal / collection
- Nano Research
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.26599/nr.2026.94908827
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Cite this source
Yi Xiang; Le-Jun Wang; Qin Xiang; Hong-Lin Ma; Chun-Ming Yang; Zhi-Qiang Fan; Lei Hu. High driving current and enhanced gate control in 1-nm gate length type-II ZnO/GaN vdWH field-effect transistor via a constituent-layer-selective doping strategy. Nano Research. 2026-10. https://doi.org/10.26599/nr.2026.94908827