High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere
Md. Iktiham Bin Taher; Mohit Kumar; Yacine Halfaya; Mathieu Lazerges; Nossikpendou Yves Sama; Karim Bouzid; Tarik Moudakir; Thi Huong Ngo; Hafsa Bouhnane; Safa Othmani; Aurelien Randi; Thomas Guermont; Jacques Pironon; Simon Gautier
- Published
- Publisher
- Elsevier BV
- Journal / collection
- International Journal of Hydrogen Energy
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.ijhydene.2023.12.070
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Cite this source
Md. Iktiham Bin Taher; Mohit Kumar; Yacine Halfaya; Mathieu Lazerges; Nossikpendou Yves Sama; Karim Bouzid; Tarik Moudakir; Thi Huong Ngo; Hafsa Bouhnane; Safa Othmani; Aurelien Randi; Thomas Guermont; Jacques Pironon; Simon Gautier. High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere. International Journal of Hydrogen Energy. 2024-02. https://doi.org/10.1016/j.ijhydene.2023.12.070