Effect of GaN cap layer towards ohmic contact of open-gate Cr AlGaN/GaN high electron mobility transistor
Najihah Fauzi; Amirul Firdaus; Shaili Falina; Sabah M. Mohammad; Masafumi Inaba; Hiroshi Kawarada; Mohd Syamsul
- Published
- Publisher
- Inderscience Publishers
- Journal / collection
- International Journal of Nanotechnology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1504/ijnt.2024.141755
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Cite this source
Najihah Fauzi; Amirul Firdaus; Shaili Falina; Sabah M. Mohammad; Masafumi Inaba; Hiroshi Kawarada; Mohd Syamsul. Effect of GaN cap layer towards ohmic contact of open-gate Cr AlGaN/GaN high electron mobility transistor. International Journal of Nanotechnology. 2024. https://doi.org/10.1504/ijnt.2024.141755