Development of a Bi2S3 films extended-gate field-effect transistor for low-dose X-ray detection
S. A. Aloraini; Naser M. Ahmed; S. A. M. Samsuri; M. H. Eisa; Ahmed Alshahrani; Alhussain A. Abuhoza; Saeed Almalki
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Materials Science: Materials in Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s10854-026-18575-0
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Cite this source
S. A. Aloraini; Naser M. Ahmed; S. A. M. Samsuri; M. H. Eisa; Ahmed Alshahrani; Alhussain A. Abuhoza; Saeed Almalki. Development of a Bi2S3 films extended-gate field-effect transistor for low-dose X-ray detection. Journal of Materials Science: Materials in Electronics. 2026-10. https://doi.org/10.1007/s10854-026-18575-0