Grid-patterned trench insulated gate bipolar transistor for 1.2 kV hybrid/plug-in hybrid electric vehicle silicon power devices
Satoru Machida; Yusuke Yamashita; Jun Saito; Masaru Senoo
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad1258
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Cite this source
Satoru Machida; Yusuke Yamashita; Jun Saito; Masaru Senoo. Grid-patterned trench insulated gate bipolar transistor for 1.2 kV hybrid/plug-in hybrid electric vehicle silicon power devices. Japanese Journal of Applied Physics. 2024-01-05. https://doi.org/10.35848/1347-4065/ad1258