Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design
Chong-Rong Huang; Hsien-Chin Chiu; Hsuan-Ling Kao; Hsiang-Chun Wang; Shinn-Yn Lin; Chih-Tien Chen; Kuo-Jen Chang
- Published
- Publisher
- American Vacuum Society
- Journal / collection
- Journal of Vacuum Science & Technology B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1116/6.0003551
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Cite this source
Chong-Rong Huang; Hsien-Chin Chiu; Hsuan-Ling Kao; Hsiang-Chun Wang; Shinn-Yn Lin; Chih-Tien Chen; Kuo-Jen Chang. Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design. Journal of Vacuum Science & Technology B. 2024-05-31. https://doi.org/10.1116/6.0003551