Effects of Group IVA Elements on the Electrical Response of a Ge2Se3-Based Optically Gated Transistor
Md Faisal Kabir; Kristy A. Campbell
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi15081000
The original publisher provides the full text and its access options.
Cite this source
Md Faisal Kabir; Kristy A. Campbell. Effects of Group IVA Elements on the Electrical Response of a Ge2Se3-Based Optically Gated Transistor. Micromachines. 2024-08-01. https://doi.org/10.3390/mi15081000