Technology for Obtaining High-Quality Contact for a Reliable Fit of a High-Power Transistor Crystal
Federal State Budgetary Educational Institution of Higher Education "; A.R. Shakhmayeva; Dagestan State Technical University"; , Makhachkala, Russian Federation; E. Kazalieva; Federal State Budgetary Educational Institution of Higher Education "Dagestan State Technical University", Makhachkala, Russian Federation
- Published
- Publisher
- New Technologies Publishing House
- Journal / collection
- Nano- i Mikrosistemnaya Tehnika
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.17587/nmst.26.38-41
The original publisher provides the full text and its access options.
Cite this source
Federal State Budgetary Educational Institution of Higher Education "; A.R. Shakhmayeva; Dagestan State Technical University"; , Makhachkala, Russian Federation; E. Kazalieva; Federal State Budgetary Educational Institution of Higher Education "Dagestan State Technical University", Makhachkala, Russian Federation. Technology for Obtaining High-Quality Contact for a Reliable Fit of a High-Power Transistor Crystal. Nano- i Mikrosistemnaya Tehnika. 2024-02-21. https://doi.org/10.17587/nmst.26.38-41